Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory.The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT change polarity in an electric field, thereby producing a power efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption or magnetic interference, making F-RAM a reliable nonvolatile memory.

FeRAM's advantages over Flash include: lower power usage, faster write performance and a much greater maximum read/write endurance (about 1010 to 1014 cycles). FeRAMs have data retention times of more than 10 years at +85 °C (up to many decades at lower temperatures).Market disadvantages of FeRAM are much lower storage densities than flash devices, storage capacity limitations and higher cost. Like DRAM, FeRAM's read process is destructive, necessitating a write-after-read architecture.