Explore topic-wise fullforms in Electronics

INFO: Full form for EQUIPC/I is Equipment Control and Integration in Electronics category

INFO: Full form for EEDF is Electron Energy Distribution Function in Electronics category
EEDF also has other full forms in other categories mentioned below.

INFO: Full form for EEPLD is Electrically Erasable Programmable Logic Device in Electronics category

INFO: Full form for ECSRK is Electrical Connector Supplemental Repair Kit in Electronics category

INFO: Full form for EDENDOR is Electrically Detected Electron-nuclear Double Resonance in Electronics category

INFO: Full form for FPLF is Field-programmable Logic Family in Electronics category

INFO: Full form for FTTW is Fiber To The Workplace in Electronics category
FTTW also has other full forms in other categories mentioned below.

INFO: Full form for FWRE is Fault Warning Routing Equipment in Electronics category

INFO: Full form for FS-PAL is Field Sequential Phase Alternation Line in Electronics category

INFO: Full form for GBWP is Gain-bandwidth Product in Electronics category
GBWP also has other full forms in other categories mentioned below.

INFO: Full form for FRNC is Flame Retardant Non Corrosive in Electronics category

INFO: Full form for DRUPS is Diesel Rotary Uninterrupted Power Supply in Electronics category
DRUPS also has other full forms in other categories mentioned below.

INFO: Full form for EBHT is Electron Beam High Throughput Lithography in Electronics category

INFO: Full form for DTMPN is Defect Test Monitor Phase Number in Electronics category

INFO: Full form for FLOPC is Floating Point Operations Needed Per Cycle in Electronics category

INFO: Full form for DTS-I is Dual Twin Spark Ignition in Electronics category

INFO: Full form for FEOL is Front End of Line in Electronics category
FEOL also has other full forms in other categories mentioned below.

INFO: Full form for FBS-M is Frequency Bank System with M Number of Signals in Electronics category

INFO: Full form for FMCW is Frequency-modulated Continuous Wave in Electronics category
FMCW also has other full forms in other categories mentioned below.

INFO: Full form for FOLZ is First-order Laue Zone in Electronics category

INFO: Full form for FLAPW is Full-potential Linearized Augmented Plane Wave in Electronics category

INFO: Full form for FLOOPS is Florida Object-oriented Process Simulator in Electronics category

INFO: Full form for FOUP is Front Opening Unified Pod in Electronics category

INFO: Full form for InFOCµS is Focusing Optics Collaboration for Micro-crab Sensitivity in Electronics category

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon. The voltage of the covered gate determines the electrical conductivity of the device; this ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals.

The MOSFET was invented by Mohamed M. Atalla and Dawon Kahng at Bell Labs in 1959, and first presented in 1960. It is the basic building block of modern electronics, and the most frequently manufactured device in history, with an estimated total of 13 sextillion (1.3×1022) MOSFETs manufactured between 1960 and 2018. It is the dominant semiconductor device in digital and analog integrated circuits (ICs), and the most common power device. It is a compact transistor that has been miniaturised and mass-produced for a wide range of applications, revolutionizing the electronics industry and the world economy, and being central to the digital revolution, silicon age and information age. MOSFET scaling and miniaturization has been driving the rapid exponential growth of electronic semiconductor technology since the 1960s, and enables high-density ICs such as memory chips and microprocessors. The MOSFET is considered the "workhorse" of the electronics industry.

A key advantage of a MOSFET is that it requires almost no input current to control the load current, when compared with bipolar junction transistors (BJTs). In an enhancement mode MOSFET, voltage applied to the gate terminal can increase the conductivity from the "normally off" state. In a depletion mode MOSFET, voltage applied at the gate can reduce the conductivity from the "normally on" state. MOSFETs are also capable of high scalability, with increasing miniaturization, and can be easily scaled down to smaller dimensions. They also have faster switching speed (ideal for digital signals), much smaller size, consume significantly less power, and allow much higher density (ideal for large-scale integration), compared to BJTs. MOSFETs are also cheaper and have relatively simple processing steps, resulting in high manufacturing yield.

MOSFETs can either be manufactured as part of MOS integrated circuit chips or as discrete MOSFET devices (such as a power MOSFET), and can take the form of single-gate or multi-gate transistors. Since MOSFETs can be made with either p-type or n-type semiconductors (PMOS or NMOS logic, respectively), complementary pairs of MOSFETs can be used to make switching circuits with very low power consumption: CMOS (Complementary MOS) logic.

The name "metal–oxide–semiconductor" (MOS) typically refers to a metal gate, oxide insulation, and semiconductor (typically silicon). However, the "metal" in the name MOSFET is sometimes a misnomer, because the gate material can also be a layer of polysilicon (polycrystalline silicon). Along with oxide, different dielectric materials can also be used with the aim of obtaining strong channels with smaller applied voltages. The MOS capacitor is also part of the MOSFET structure.

INFO: Full form for IMD3 is Third-order Inter-modulation Distortion in Electronics category

INFO: Full form for InGaAs is Indium Gallium Arsenide in Electronics category

INFO: Full form for IP&E is Interconnect, Passive, and Electromechanical in Electronics category

INFO: Full form for IMD1 is First-order Inter-modulation Distortion in Electronics category

INFO: Full form for IMD5 is Fifth-order Inter-modulation Distortion in Electronics category

INFO: Full form for INCAMS is Individual Cassette Manufacturing System in Electronics category

INFO: Full form for IRFPA is Infra-red Focal Plane Array in Electronics category

INFO: Full form for InGaAsP is Indium Gallium Arsenide Phosphide in Electronics category

INFO: Full form for GOLB is Gogear On Linux Boxes in Electronics category

INFO: Full form for GRAMMA is Gig and Recording Amplifier Monitor Modulation Attenuator in Electronics category
GRAMMA also has other full forms in other categories mentioned below.

INFO: Full form for GRINSCH is Graded Index Separate Confinement Heterostructure in Electronics category

INFO: Full form for GASAD is Gate and Source and Drain in Electronics category

INFO: Full form for GSPID is Gain- Scheduled Proportional Integro-differential in Electronics category

Color Television Interface Adaptor (CTIA) and its successor Graphic Television Interface Adaptor (GTIA) are custom chips used in the Atari 8-bit family of computers and in the Atari 5200 home video game console. In these systems, a CTIA or GTIA chip works together with ANTIC to produce the video display. ANTIC generates the playfield graphics (text and bitmap) while CTIA/GTIA provides the color for the playfield and adds overlay objects known as player/missile graphics (sprites). Under the direction of Jay Miner, the CTIA/GTIA chips were designed by George McLeod with technical assistance of Steve Smith.

Color Television Interface Adaptor and Graphic Television Interface Adaptor are names of the chips as stated in the Atari field service manual. Various publications named the chips differently, sometimes using the alternative spelling Adapter or Graphics, or claiming that the "C" in "CTIA" stands for Colleen/Candy and "G" in "GTIA" is for George.

INFO: Full form for GEMVS is Generic Equipment Model Verification System in Electronics category

The Hazard Communication Standard requires employers in the United States to disclose toxic and hazardous substances in workplaces. This is related to the Worker Protection Standard.

Specifically, this requires unrestricted employee access to the Material Safety Data Sheet or equivalent, and appropriate training needed to understand health and safety risks.

A high-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for a MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device. Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention due to their high-power performance. Like other FETs, HEMTs are used in integrated circuits as digital on-off switches. FETs can also be used as amplifiers for large amounts of current using a small voltage as a control signal. Both of these uses are made possible by the FET’s unique current–voltage characteristics. HEMT transistors are able to operate at higher frequencies than ordinary transistors, up to millimeter wave frequencies, and are used in high-frequency products such as cell phones, satellite television receivers, voltage converters, and radar equipment. They are widely used in satellite receivers, in low power amplifiers and in the defense industry.

INFO: Full form for HOLZ is Higher-order Laue Zone in Electronics category

INFO: Full form for HOMO is Highest Occupied Molecular Orbital in Electronics category
HOMO also has other full forms in other categories mentioned below.

INFO: Full form for HFRR is Hydrofluoric Acid Reprocessor Return System in Electronics category
HFRR also has other full forms in other categories mentioned below.

INFO: Full form for HOPG is Highly-oriented Pyrolytic Graphite in Electronics category
HOPG also has other full forms in other categories mentioned below.

Insulation may refer to:

INFO: Full form for IRONMAN is Improving Reliability of New Machines At Night in Electronics category
IRONMAN also has other full forms in other categories mentioned below.

INFO: Full form for LKDM is Low K Dielectric Material (k = Dielectric Constant) in Electronics category

Lawrence Livermore National Laboratory (LLNL) is a federal research facility in Livermore, California, United States, founded by the University of California, Berkeley in 1952. Originally a branch of the Lawrence Berkeley National Laboratory, the Lawrence Livermore laboratory became autonomous in 1971 and was designated a national laboratory in 1981.

A Federally Funded Research and Development Center (FFRDC), Lawrence Livermore lab is primarily funded by the U.S. Department of Energy (DOE) and managed and operated by Lawrence Livermore National Security, LLC (LLNS), a partnership of the University of California, Bechtel, BWX Technologies, AECOM, and Battelle Memorial Institute in affiliation with the Texas A&M University System. In 2012, the laboratory had the synthetic chemical element livermorium (element 116) named after it.