Explore topic-wise fullforms in Electronics

INFO: Full form for MINDO is Modified Intermediate Neglect of Diatomic Overlap in Electronics category

INFO: Full form for LLNQ is Least Lots Next Queue in Electronics category

INFO: Full form for LNDF is Linear Natural Density Filter in Electronics category

INFO: Full form for LTWT is Linearized Traveling Wave Tube in Electronics category

INFO: Full form for LTWTA is Linearized Traveling Wave Tube Amplifier in Electronics category

INFO: Full form for LOCOS is Local Oxidation of Silicon in Electronics category

INFO: Full form for LSHI is Large-scale Hybrid Integration in Electronics category

INFO: Full form for LDDM is Laser Doppler Displacement Meter in Electronics category

INFO: Full form for JMPC-HD is Jampro Medium Power Type C Antenna - High Definition in Electronics category

INFO: Full form for Ku-BAND is 12 To 18 Ghz Frequency Band in Electronics category

Los Alamos National Laboratory (Los Alamos or LANL for short) is a United States Department of Energy national laboratory initially organized during World War II for the design of nuclear weapons as part of the Manhattan Project. It is a short distance northwest of Santa Fe, New Mexico, in the southwestern United States.

Los Alamos was selected as the top-secret location for bomb design in late 1942 and officially commissioned the next year, under the management of the University of California. At the time it was known as Project Y and was the center for weapon design and overall coordination. Other labs, today known as Oak Ridge National Laboratory and the Hanford Site, concentrated on the production of uranium and plutonium bomb fuels. Los Alamos was the heart of the project, collecting together some of the world's most famous scientists, among them numerous Nobel Prize winners. The site was known variously as Project Y, Los Alamos Laboratory, and Los Alamos Scientific Laboratory through this period.

The lab's existence was announced to the world in the post-WWII era, when it became known universally as Los Alamos. In 1952, the Atomic Energy Commission formed a second design lab under the direction of the University of California, Berkeley, becoming the Lawrence Livermore National Laboratory (LLNL). Since that date the two labs have competed on a wide variety of bomb designs. With the ending of the Cold War, both labs turned their focus increasingly to civilian missions. Today, Los Alamos is one of the largest science and technology institutions in the world. It conducts multidisciplinary research in fields such as national security, space exploration, nuclear fusion, renewable energy, medicine, nanotechnology, and supercomputing. The town of Los Alamos, New Mexico, directly north of the lab, grew extensively through this period.

After several reorganizations, LANL is currently managed and operated by Triad National Security, LLC.

INFO: Full form for LCOE is Levelized Cost of Energy in Electronics category
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INFO: Full form for JQP is Josephson Quasi Particle in Electronics category
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INFO: Full form for JSTS is Journal of Semiconductor Technology and Science in Electronics category
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INFO: Full form for JESSI is Joint European Submicron Silicon Initiative in Electronics category

INFO: Full form for L-Band is 1435 - 1525 Mhz Frequency Band in Electronics category
L-Band also has other full forms in other categories mentioned below.

INFO: Full form for LAMMS is Laser Micro-mass Spectroscopy in Electronics category

INFO: Full form for JIAB is Jimi In A Box in Electronics category

INFO: Full form for IRTC-1 is Interconnect Reliability Test Chip-1 in Electronics category

INFO: Full form for IVRU is Interactive Voice Response Unit in Electronics category

INFO: Full form for IPVDC is Interior Physical Vapor Deposition Coating in Electronics category

INFO: Full form for JBCV is Junction Box, Current Relay, Over-voltage Protection in Electronics category

INFO: Full form for HREM is High-resolution Electron Microscopy in Electronics category
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INFO: Full form for I300I is International 300 Mm Initiative in Electronics category

INFO: Full form for HUPW is Hot Ultra-pure Water in Electronics category

INFO: Full form for HVEM is High-voltage Electron Microscopy in Electronics category
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INFO: Full form for IA-32 is Intel 32-bit Architecture in Electronics category

INFO: Full form for I=E/R is Electrical Measured Current Flow in Electronics category

INFO: Full form for IFDR is Improved Force Directed Relaxation in Electronics category
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INFO: Full form for IA-64 is Intel 64-bit Architecture in Electronics category

INFO: Full form for IEEE-APS is Institute of Electrical and Electronics Engineers - Antennas and Propagation Society in Electronics category

INFO: Full form for IMD2 is Second-order Inter-modulation Distortion in Electronics category

INFO: Full form for IEEE-AESS is Institute of Electrical and Electronics Engineers - Aerospace and Electronics Systems Society in Electronics category

INFO: Full form for IMD4 is Fourth-order Inter-modulation Distortion in Electronics category

INFO: Full form for HWHM is Half Width At Half Maximum in Electronics category
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INFO: Full form for I-PAL is Improved Phase Alternate Line in Electronics category

INFO: Full form for HREELS is High-resolution Electron Energy Loss Spectroscopy in Electronics category

INFO: Full form for HTRB is High-temperature Reverse Bias in Electronics category

INFO: Full form for HILP is High Impact, Low Probability in Electronics category
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INFO: Full form for GSMBE is Gas Source Molecular Beam Epitaxy in Electronics category

INFO: Full form for HIPOX is High-pressure Oxygen in Electronics category

INFO: Full form for HDPVR is High Definition Personal Video Recorder in Electronics category

INFO: Full form for HDSX is High Definition Sound Expansion in Electronics category
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INFO: Full form for GR&R is Gauge Reproduceability and Repeatability in Electronics category
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INFO: Full form for HDFV is High-definition Fire Vision in Electronics category

INFO: Full form for FLOTOX is Floating Gate Tunnel Oxide in Electronics category

INFO: Full form for HCCT is Heat Cell Conductor Technology in Electronics category
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INFO: Full form for FPFB is Front Panel Fan Board in Electronics category
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The fractional quantum Hall effect (FQHE) is a physical phenomenon in which the Hall conductance of 2D electrons shows precisely quantised plateaus at fractional values of e 2 / h {\displaystyle e^{2}/h} . It is a property of a collective state in which electrons bind magnetic flux lines to make new quasiparticles, and excitations have a fractional elementary charge and possibly also fractional statistics. The 1998 Nobel Prize in Physics was awarded to Robert Laughlin, Horst Störmer, and Daniel Tsui "for their discovery of a new form of quantum fluid with fractionally charged excitations" Laughlin's explanation only applies to fillings ν = 1 / m {\displaystyle \nu =1/m} where m {\displaystyle m} is an odd integer. The microscopic origin of the FQHE is a major research topic in condensed matter physics.

INFO: Full form for FODMS is Fiber Optic Digital Multiplex System in Electronics category
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